Absolute Hall-effect sensitivity (SA) and minimum magnetic resolution (Bmin) of two-dimensional (2D) van der Waals Hall elements are predicted without magnetic fields by considering the drain voltage-dependent transconductance and current power spectrum density (PSD). The measured drain-bias-dependent PSD of rhenium disulfide multilayers is suitably described by the carrier number fluctuation noise model, indicating that the effects of carrier trapping/de-trapping into oxide traps dominate the observed current variations. To achieve high currentnormalized Hall sensitivity and SA with a low Bmin at a specific current value, the contact resistance and oxide trap density should be further optimized. Our discussion provides an effective approach for the optimization of 2D multilayer-based Hall elements.

https://doi.org/10.5757/ASCT.2023.32.2.41